Single Bipolar Transistors MJE18002G product image

MJE18002G

$0.50
  • Description:TRANS NPN 450V 2A TO-220
  • Series:SWITCHMODE™

SKU:4616a4e3691b Category: Brand:

  
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MJE18002G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 450V 2A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE18002G

  • Description:TRANS NPN 450V 2A TO-220
  • Series:SWITCHMODE™
  • Mfr:onsemi
  • Package:Tube,Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):450 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 1A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:14 @ 200mA, 5V
  • Power - Max:50 W
  • Frequency - Transition:13MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE18002G

MJE18002G

Single Bipolar Transistors Overview

The MJE18002G is a PNP silicon power transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 80 V and a continuous collector current capacity of 3 A. The device utilizes a TO-126 plastic package with three leads, providing a thermal resistance from junction to case of 10°C/W. It operates within a temperature range of -65°C to +150°C and has a maximum power dissipation of 1.5 W. The component meets RoHS compliance standards.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for complementary circuits
  • High surge current capability for robust switching performance
  • Lead-free construction compliant with environmental directives

Single Bipolar Transistors Applications

  • General-purpose power switching
  • Complementary output stages in audio amplifiers
  • Driver circuits requiring PNP control

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the procurement channel provides official documentation matching the MJE18002G designation. Ensure the received components match the specified TO-126 package dimensions and lead configuration. Check for RoHS compliance markings if required by assembly specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 3 A PNP switch with an 80 V breakdown voltage. Consider the TO-126 package constraints regarding thermal management and board space. Compare against NPN counterparts like the MJE18001G for complementary pair requirements. Evaluate the 1.5 W power dissipation limit against the expected load currents and ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the MJE180 series of power transistors from onsemi. The series includes complementary NPN and PNP devices intended for high-current, low-voltage applications. These transistors are commonly used in consumer electronics and industrial equipment where reliable switching is necessary.

Single Bipolar Transistors Replacement Considerations

The MJE18001G serves as the complementary NPN counterpart within the same series. Verify pinout compatibility and electrical parameters before substituting with other generic PNP transistors rated for similar current and voltage levels.

MJE18002GMJE18002G
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