MMBT2222ALT1G

Single Bipolar Transistors Overview

The MMBT2222ALT1G is an NPN silicon general-purpose transistor manufactured by onsemi in a SOT-23 (TO-236) surface-mount package. It features a maximum collector-emitter voltage of 40 Vdc and a continuous collector current rating of 600 mAdc. The device supports a total power dissipation of 225 mW at 25°C on an FR-5 board, with a junction temperature range of -55°C to +150°C. Key electrical characteristics include a minimum DC current gain of 100 at 150 mA and a transition frequency of 300 MHz.

Single Bipolar Transistors Feature Summary

• Qualified for automotive applications under AEC-Q101 standards with PPAP capability.
• Manufactured using lead-free, halogen-free, and BFR-free processes compliant with RoHS directives.
• Designed for low-power surface-mount assembly and switching applications.

Single Bipolar Transistors Applications

• Signal processing circuits
• Industrial control systems
• Automotive electronics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix '1G' confirms the tape-and-reel packaging format and Pb-free status as documented in the manufacturer's ordering information table. Confirm that the 'A' designation aligns with the required 40 V collector-emitter breakdown voltage rather than the lower voltage variant. Ensure compliance with RoHS and halogen-free requirements matches project specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor with a 40 V collector-emitter voltage rating is required for surface-mount designs. The SOT-23 package provides a compact footprint suitable for space-constrained PCB layouts. Consider the 225 mW thermal dissipation limit and ensure adequate thermal management or derating strategies are implemented for high-duty-cycle operations within the specified temperature range.

Single Bipolar Transistors Part Context

This part belongs to the MMBT2222L/AL family of general-purpose NPN transistors produced by onsemi. The 'AL' designation specifically denotes the 40 V collector-emitter voltage rating, distinguishing it from the 30 V rated 'L' variant. The 'S' prefix indicates automotive qualification, while the '1G' suffix specifies the standard 3000-unit tape-and-reel packaging configuration.

Single Bipolar Transistors Replacement Considerations

MMBT2222LT1G

Single Bipolar Transistors FAQ

What is the pin configuration for the MMBT2222ALT1G?

In the SOT-23 package, Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

Is the MMBT2222ALT1G suitable for automotive use?

Yes, the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

What is the maximum collector-base voltage for this transistor?

The maximum collector-base voltage (VCBO) for the MMBT2222AL series is 75 Vdc.