MMBT3906WT1G

Single Bipolar Transistors Overview

The MMBT3906WT1G is a single PNP bipolar junction transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-70-3 surface-mount package. The device supports a maximum continuous DC collector current of -200 mA and withstands a collector-emitter voltage (VCEO) of 40 V, with a collector-base voltage (VCBO) also rated at 40 V. The emitter-base breakdown voltage (VEBO) is specified at 5 V. Key electrical characteristics include a collector-emitter saturation voltage of 400 mV, a power dissipation capability of 150 mW, and a transition frequency (fT) of 250 MHz. The minimum DC current gain (hFE) is 60. The component operates within a temperature range from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• Single PNP configuration designed for general-purpose switching and amplification applications.
• Compact SC-70-3 surface-mount package optimized for space-constrained printed circuit board layouts.
• Silicon-based construction ensuring reliable operation across extended industrial temperature ranges.

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Logic interface buffering

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'WT1G' against official onsemi documentation to confirm the SC-70-3 package and standard performance grades. Ensure that the ordering information matches the required tape-and-reel or cut-tape packaging formats available through authorized channels. Cross-reference the manufacturer part number with the latest datasheet revisions to validate RoHS compliance status and material declarations prior to final procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor with 40 V collector-emitter voltage and 200 mA current handling is required in an SC-70-3 footprint. Consider the 150 mW power dissipation limit and 250 MHz transition frequency for high-speed switching needs. Verify that the minimum hFE of 60 meets the circuit's drive requirements. Compare against other series members like MMBT3906LT1G if higher power dissipation or automotive qualification is necessary.

Single Bipolar Transistors Part Context

This device belongs to the MMBT3906W series of small-signal PNP transistors. It serves as a surface-mount alternative to through-hole counterparts, offering similar electrical characteristics in a significantly smaller form factor. The series is engineered for cost-effective mass production while maintaining consistent performance parameters suitable for consumer electronics and general industrial equipment.

Single Bipolar Transistors Replacement Considerations

MMBT3906WT1G

Single Bipolar Transistors FAQ

What is the maximum power dissipation for the MMBT3906WT1G?

The maximum power dissipation is 150 mW.

Does the MMBT3906WT1G have AEC-Q100 automotive qualification?

No, the MMBT3906WT1G does not list AEC-Q100 qualification; the SMMBT3906LT1G variant holds this certification.

What is the transition frequency of the MMBT3906WT1G?

The transition frequency (fT) is 250 MHz.