MMBT4403M3T5G

Single Bipolar Transistors Overview

The MMBT4403M3T5G is a single PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 40 V and a continuous collector current rating of 600 mA. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 265 mW. Key electrical characteristics include a transition frequency of 200 MHz and a DC current gain (hFE) of at least 100 at 150 mA with a 2 V collector-emitter voltage. The saturation voltage is specified as a maximum of 750 mV at 50 mA base current and 500 mA collector current. It is housed in a surface-mount SOT-723 package.

Single Bipolar Transistors Feature Summary

• Single PNP configuration designed for general-purpose switching and amplification applications
• High-speed operation capability supported by a 200 MHz transition frequency
• Robust thermal performance allowing operation up to a 150°C junction temperature
• Compact surface-mount construction utilizing the SOT-723 three-terminal outline

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Driver interfaces for logic-level control
• Battery management system protection circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix T5G against the manufacturer's official datasheet to confirm the SOT-723 package type and tape-and-reel packaging format. Ensure that the RoHS compliance status matches current regulatory requirements for the target assembly process. Cross-reference the part number with the latest onsemi documentation to confirm active production status and any potential design changes or pinout variations before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor with moderate current handling and high-speed switching is required. The SOT-723 package offers space savings compared to traditional SOT-23 options while maintaining similar electrical performance. Consider the 40 V breakdown voltage and 600 mA current limits to ensure adequate headroom for the intended load conditions. Evaluate the thermal constraints of the application to ensure the 265 mW power dissipation limit is not exceeded under worst-case operating scenarios.

Single Bipolar Transistors Part Context

This device belongs to the MMBT4403 series of small-signal transistors from onsemi. It serves as a modern, lead-free alternative to older discrete transistor packages, integrating high reliability into a miniature footprint. The M3 designation typically indicates specific manufacturing processes related to environmental compliance and material purity standards established by the semiconductor division.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data.