Single FETs, MOSFETs MMFT960T1G product image

MMFT960T1G

$0.51
  • Description:MOSFET N-CH 60V 300MA SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1b8a4bf6814c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MMFT960T1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 300MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for MMFT960T1G

  • Description:MOSFET N-CH 60V 300MA SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.7Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.2 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:65 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):800mW (Ta)
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223 (TO-261)
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for MMFT960T1G

MMFT960T1G

Single FETs, MOSFETs Overview

The MMFT960T1G is a single N-channel Power MOSFET manufactured by onsemi. It features a Drain-Source Breakdown Voltage (Vds) of 60 V and a Continuous Drain Current (Id) of 300 mA at case temperature. The device exhibits a maximum Drain-Source On-Resistance (Rds On) of 1.7 Ohms. It is designed for surface mount applications in the SOT-223 (TO-261) package, with a power dissipation rating of 800 mW at ambient temperature.

Single FETs, MOSFETs Feature Summary

  • Single N-channel enhancement mode field-effect transistor
  • Surface-mount construction in SOT-223 package
  • Designed for low-current switching applications

Single FETs, MOSFETs Applications

  • Low-power signal switching circuits
  • Battery protection modules
  • General-purpose load switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official manufacturer documentation. Check current lifecycle status as availability may be limited due to discontinuation. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during installation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 60 V blocking capability with moderate current handling up to 300 mA. The high on-resistance makes it suitable for low-power applications rather than high-efficiency power conversion. Evaluate thermal management requirements given the 800 mW dissipation limit in the SOT-223 package.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's discrete transistor portfolio, specifically within the MOSFET category. It serves as a small-signal or low-power switching element within the broader family of surface-mount transistors offered by the manufacturer for consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Public sources indicate this product has been discontinued. Designers should consult official manufacturer resources for verified substitute part numbers that match the required voltage, current, and package specifications.

MMFT960T1GMMFT960T1G
$0.51
Buy Now

Recent News