MSD1819A-RT1G

$0.14

Description：TRANS NPN 50V 0.1A SC70-3
Series：-

SKU:9c100490298c Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

MSD1819A-RT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 0.1A SC70-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MSD1819A-RT1G

Description：TRANS NPN 50V 0.1A SC70-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：100nA
DC Current Gain (hFE) (Min) @ Ic, Vce：210 @ 2mA, 10V
Power - Max：150 mW
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SC-70-3 (SOT323)
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MSD1819A-RT1G

MSD1819A-RT1G

Single Bipolar Transistors Overview

The MSD1819A-RT1G is an NPN silicon epitaxial planar transistor designed for general-purpose amplifier applications. It operates within a collector-emitter voltage of 50 Vdc and supports a continuous collector current of 100 mAdc. The device features a DC current gain (hFE) ranging from 210 to 460, with a maximum collector-base breakdown voltage of 60 Vdc. Thermal characteristics include a power dissipation limit of 150 mW at 25°C ambient temperature and a junction temperature rating up to 150°C. It is housed in the SC-70 (SOT-323) surface-mount package.

Single Bipolar Transistors Feature Summary

High DC current gain (hFE) ranging from 210 to 460
Low collector-emitter saturation voltage
Automotive qualification via AEC-Q101 standard
Lead-free, halogen-free, and RoHS compliant construction

Single Bipolar Transistors Applications

General purpose amplifier circuits
Low power surface mount applications
Automotive electronic systems requiring unique site control

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the NSV prefix indicates automotive-grade manufacturing requirements if applicable. Ensure the component matches the SC-70 (SOT-323) footprint dimensions specified in the mechanical case outline before integration into printed circuit board designs.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are required for small-signal amplification. Consider the 50 Vdc collector-emitter voltage rating for appropriate biasing conditions. Evaluate the 150 mW power dissipation limit relative to the thermal resistance and ambient operating temperature to ensure safe junction temperatures during operation.

Single Bipolar Transistors Part Context

This part belongs to the MSD1819A series of NPN silicon transistors manufactured by onsemi. It utilizes an epitaxial planar process technology optimized for surface-mount reliability. The device is available in the SC-70 package, providing a compact solution for space-constrained electronic designs requiring robust switching or amplification capabilities.