MT53D512M32D2DS-046 WT ES:D

Memory IC Overview

The Micron MT53D512M32D2DS-046 WT ES:D is a 16 Gbit LPDDR4 SDRAM component organized as 512 M x 32. It utilizes a VFBGA-200 package and supports a maximum clock frequency of 2.133 GHz. The device operates with a maximum supply voltage of 1.1 V and functions within a temperature range of -25°C to +85°C.

Memory IC Feature Summary

• Supports ultra-low voltage core and I/O power domains for energy efficiency
• Features a 16n pre-fetch DDR architecture for high data throughput
• Includes eight internal banks per channel for concurrent operations

Memory IC Applications

• Mobile computing platforms requiring high bandwidth
• Embedded systems with space constraints
• Industrial control applications

Memory IC Procurement Notes

Verify the specific engineering sample status (ES) with the manufacturer or authorized distributors before procurement. Confirm that the engineering sample designation does not restrict functional testing or limit availability compared to mass production variants. Ensure compatibility with system requirements regarding lead times and qualification documentation.

Memory IC Selection Notes

Select this component when a 32-bit bus width and 16 Gbit density are required in a compact 200-ball package. Consider the -25°C to +85°C operating range for standard commercial or industrial environments. Verify that the host controller supports LPDDR4 signaling standards and voltage levels compatible with the specified 1.1 V operation.

Memory IC Part Context

This part belongs to the Micron MT53D series of mobile LPDDR4 SDRAM devices. These components are designed for applications demanding high performance and low power consumption. The specific suffix indicates the package type, speed grade, and temperature rating configuration unique to this variant.