NDD01N60T4G

Description：MOSFET N-CH 600V 1.5A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:fe935098da52 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NDD01N60T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 600V 1.5A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NDD01N60T4G

Description：MOSFET N-CH 600V 1.5A DPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：7.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：46W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NDD01N60T4G

NDD01N60T4G

Single FETs, MOSFETs Overview

The onsemi NDD01N60T4G is a single N-channel enhancement mode power MOSFET designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 1.5 A at case temperature. The device utilizes a DPAK (TO-252) three-pin package with dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height. Key electrical parameters include a maximum on-resistance (Rds(on)) of 8 Ω, a typical gate charge of 19 nC at 10 V, and a maximum gate-source voltage range of -30 V to +30 V. It operates within a junction temperature range of -55 °C to +150 °C and has a maximum power dissipation of 8.5 W.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 600 V drain-source breakdown voltage for robust switching performance.
Surface-mount DPAK (TO-252) packaging optimized for automated assembly and thermal management.
Enhanced mode operation with low gate charge characteristics for efficient drive requirements.

Single FETs, MOSFETs Applications

General-purpose high-voltage switching circuits
Power supply output stages
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T4G' to confirm tape-and-reel packaging and lead-free compliance status. Confirm that the 1.5 A rating applies under specified case temperature conditions rather than ambient conditions. Ensure the 8 Ω Rds(on) value aligns with the required conduction losses for the target application design.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V rated N-channel MOSFET is required in a DPAK package. Consider the 8 Ω on-resistance for low-current applications where minimal conduction loss is not critical. Verify that the 1.5 A continuous current rating meets the thermal constraints of the PCB layout and heat sinking strategy.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of N-channel power MOSFETs. It is distinct from higher-current variants like the NDD04N60ZT4G, which offers 4.1 A current handling. The NDD01N60 series provides a cost-effective solution for lower-power switching needs compared to larger packages or higher-performance devices.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as NDD01N60-1G or NDT01N60T1G if pin compatibility and electrical specifications match exactly. Verify package dimensions and thermal resistance values before substituting to ensure mechanical fit and thermal performance are maintained.