NDDP010N25AZ-1H

Single FETs, MOSFETs Overview

The NDDP010N25AZ-1H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a 250 V drain-source breakdown voltage and supports a continuous drain current of 10 A. The device exhibits a maximum on-resistance of 320 mOhms at specified conditions. Gate characteristics include a threshold voltage of 2.5 V and a total gate charge of 16 nC. Electrical limits define the gate-source voltage range between -30 V and +30 V. Power dissipation capability reaches 52 W, with an operating temperature range spanning from -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon technology for robust performance in high-voltage switching applications.
• Designed for through-hole mounting within TO-251-3 packages to facilitate board integration.
• Provides enhanced channel operation suitable for general-purpose power control tasks.

Single FETs, MOSFETs Applications

• General purpose power switching circuits
• DC-DC converter topologies
• Motor drive interface stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to discontinued status. Confirm package integrity upon receipt as bulk packaging may lack protective sealing. Cross-reference datasheet revisions to ensure parameter consistency with design requirements. Validate RoHS compliance documentation matches specific manufacturing lot codes before implementation.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management capabilities given the 52 W power dissipation rating in free air. Consider the 320 mOhm on-resistance impact on conduction losses during continuous operation. Assess gate drive requirements against the 16 nC charge specification for optimal switching speed. Ensure voltage headroom accommodates the 250 V breakdown limit under transient conditions.

Single FETs, MOSFETs Part Context

This component belongs to onsemi's discrete MOSFET portfolio designed for medium-power applications. The NDDP series typically targets cost-sensitive designs requiring reliable switching performance. The specific model integrates standard planar technology optimized for industrial and consumer electronics markets.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available for this discontinued component. Designers should consult manufacturer obsolescence notices for potential alternative families or contact technical support for recommended equivalents based on specific electrical constraints.