NTB125N02R

Single FETs, MOSFETs Overview

The NTB125N02R is a 125 A, 24 V N-channel Power MOSFET manufactured by onsemi. It utilizes the Planar HD3e process for fast switching performance and features an optimized body diode with low reverse recovery time (trr) and charge (Qrr), making it suitable for synchronous operation. The device offers low input capacitance (Ciss) to minimize driver loss and optimized gate-to-drain charge (Qgd) alongside low on-resistance (RDS(on)) for shoot-through protection. Available in D2PAK packages, it supports continuous drain currents up to 125 A at case temperatures of 25°C.

Single FETs, MOSFETs Feature Summary

• Planar HD3e process technology enables fast switching performance.
• Integrated body diode optimized for synchronous rectification with low reverse recovery characteristics.
• Low input capacitance reduces driver power losses.
• Optimized gate charge and on-resistance provide enhanced shoot-through protection.

Single FETs, MOSFETs Applications

• Synchronous rectification circuits
• High-current DC-DC converters
• Motor drive applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet lists both rail and tape-and-reel shipping options for the D2PAK configuration. Confirm that the Pb-Free suffix designation aligns with project environmental compliance requirements. Ensure thermal management designs account for the junction-to-case resistance values provided in the maximum ratings section to maintain safe operating temperatures during continuous operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high current handling capabilities within a low-voltage architecture. The device is particularly appropriate for applications demanding efficient synchronous rectification due to its optimized body diode characteristics. Designers should evaluate the thermal resistance parameters against their specific PCB copper area constraints to ensure adequate heat dissipation and reliable long-term operation under varying load conditions.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's lineup of high-current N-channel power MOSFETs designed for robust performance in power electronics. The NTB125N02R specifically targets applications where low voltage drop and high efficiency are critical. It shares architectural similarities with other devices in the series but is distinguished by its specific 24 V rating and 125 A current capacity, offering a balance between conduction losses and switching speed.

Single FETs, MOSFETs Replacement Considerations

The NTP125N02R serves as a pin-compatible alternative housed in a TO-220AB package instead of the D2PAK configuration. When substituting, verify that the mechanical footprint and thermal interface of the target application can accommodate the physical dimensions of the replacement package type while maintaining equivalent electrical performance specifications.