Single FETs, MOSFETs NTD18N06T4G product image

NTD18N06T4G

$0.27
  • Description:MOSFET N-CH 60V 18A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:3b0636d6080e Category: Brand:

  
  • Quantity
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NTD18N06T4G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 18A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD18N06T4G

  • Description:MOSFET N-CH 60V 18A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 55W (Tj)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for NTD18N06T4G

NTD18N06T4G

Single FETs, MOSFETs Overview

The NTD18N06LT4G is a surface-mount N-channel Power MOSFET manufactured by onsemi, housed in a DPAK (TO-252) package. It features a 60 V drain-source voltage rating and supports a continuous drain current of 18 A at 25°C. The device exhibits a maximum on-resistance of 65 mΩ at 5 V gate drive and 9 A. Key electrical parameters include a gate charge of 22 nC at 5 V, an input capacitance of 675 pF at 25 V, and a threshold voltage of 2 V at 250 µA. Thermal performance specifies a power dissipation of 2.1 W at ambient temperature and 55 W at the junction, with an operating temperature range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

  • Logic-level compatible gate structure optimized for low-voltage driving applications
  • Low on-resistance design intended to minimize conduction losses
  • Optimized gate charge characteristics to reduce switching energy losses
  • Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number against official documentation, as suffixes such as LT or T4G indicate specific packaging or revision variants that may affect availability. Confirm compliance with current environmental directives like RoHS3 before integration. Ensure the supplier provides traceable manufacturing data consistent with onsemi quality standards to guarantee component authenticity and reliability.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with moderate current handling is required in a compact surface-mount form factor. The logic-level gate threshold facilitates direct interfacing with standard microcontrollers or low-voltage drivers. Evaluate thermal management requirements carefully, as the DPAK package relies heavily on PCB copper area for heat dissipation to maintain safe junction temperatures under load.

Single FETs, MOSFETs Part Context

This device belongs to the NTD series of power MOSFETs from onsemi, designed for general-purpose power switching applications. The series offers various voltage and current ratings within standardized packages to simplify design scalability. The NTD18 variant specifically targets applications requiring a balance between conduction efficiency and switching speed in space-constrained environments.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Potential alternatives within the same family include NTD18N06L-1G or NTD18N06T1G, provided pinout and electrical specifications match exactly.

NTD18N06T4GNTD18N06T4G
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