NTD25P03L1

Description：MOSFET P-CH 30V 25A IPAK
Series：-
Mfr：onsemi
Package：Tube

SKU:4f0df232e0e3 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTD25P03L1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 25A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD25P03L1

Description：MOSFET P-CH 30V 25A IPAK
Series：-
Mfr：onsemi
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：80mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：1260 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：75W (Tj)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：IPAK
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for NTD25P03L1

NTD25P03L1

Single FETs, MOSFETs Overview

The NTD25P03L is a P-Channel power MOSFET in a DPAK (CASE 369C) package. It features a -30 V drain-to-source voltage rating and a continuous drain current of -25 A at 25°C case temperature. The device exhibits a typical on-state resistance of 51 mΩ at VGS = -5.0 V and ID = -12.5 A. It supports a single pulse drain current of -75 A and total power dissipation of 75 W. The component includes an integrated body-drain diode with a reverse recovery time of 35 ns.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability for direct interface with standard logic circuits
High cell density design providing fast source-to-drain diode recovery characteristics
Avalanche energy rated to withstand high energy in avalanche and commutation modes

Single FETs, MOSFETs Applications

PWM motor controls
Power supplies
Converters
Bridge circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number NTD25P03L may be supplied as NTD25P03LT4G or STD25P03LT4G. The 'S' prefix indicates automotive qualification and unique site requirements. Confirm RoHS compliance and lead-free status based on the final ordered variant.

Single FETs, MOSFETs Selection Notes

Select this component for low voltage, high speed switching applications requiring robust avalanche performance. Ensure the gate drive voltage meets the logic level threshold requirements for optimal on-state resistance. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet for the intended PCB layout.

Single FETs, MOSFETs Part Context

This device belongs to onsemi's low voltage power MOSFET portfolio designed for general purpose switching. It utilizes advanced trench technology to achieve low on-resistance within the DPAK surface-mount package. The product line emphasizes reliability in inductive load environments through specified avalanche energy ratings.