NTD3055-150-1G

Single FETs, MOSFETs Overview

The NTD3055-150-1G is a lead-free, RoHS-compliant N-channel power MOSFET designed for low-voltage, high-speed switching applications. It features a Drain-to-Source Voltage (VDSS) of 60 Vdc and a continuous Drain Current (ID) of 9.0 Adc at 25 °C. The device exhibits a typical Static Drain-to-Source On-Resistance (RDS(on)) of 122 mΩ at VGS = 10 Vdc and ID = 4.5 Adc. Total Power Dissipation (PD) reaches 28.8 W at 25 °C ambient temperature. Operating and storage junction temperatures range from -55 to +175 °C.

Single FETs, MOSFETs Feature Summary

• Designed for low voltage, high speed switching applications in power supplies, converters, and motor controls.
• Lead-free construction with RoHS compliance.
• Capable of handling single pulse avalanche energy up to 30 mJ.

Single FETs, MOSFETs Applications

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package type upon ordering, as the suffix '-1G' indicates the IPAK straight lead variant (CASE 369D), distinct from the standard DPAK surface mount version. Confirm current availability status, as onsemi has marked several variants within this product family as discontinued in recent documentation revisions. Ensure compatibility with required thermal management solutions given the specified power dissipation ratings.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with a 60V rating and 9A continuous current capability is required for general-purpose switching. Consider the IPAK package if through-hole mounting or specific lead configurations are necessary for the target assembly. Evaluate thermal resistance values against the expected operating environment to ensure safe junction temperatures are maintained during operation.

Single FETs, MOSFETs Part Context

This part belongs to the NTD3055 series of power MOSFETs manufactured by onsemi. It shares electrical characteristics with other variants like the NTD3055-150G, differing primarily in physical packaging. The series is engineered for efficiency in DC-DC conversion and motor drive circuits where low on-resistance and fast switching speeds are critical performance factors.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers: NTD3055-150G, NVD3055-150T4G-VF01, NTD3055-150T4H.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse drain-to-source avalanche energy?

The maximum single-pulse drain-to-source avalanche energy (EAS) is 30 mJ, measured starting at a junction temperature of 25 °C with specific test conditions including VDD = 25 Vdc and an inductance of 1.0 mH.

How does the gate threshold voltage vary with temperature?

The Gate Threshold Voltage (VGS(th)) has a negative temperature coefficient of -6.4 mV/°C, meaning the threshold voltage decreases as the junction temperature increases.