NTD4858NA-35G

Single FETs, MOSFETs Overview

The NTD4858NA-35G is a surface-mount N-channel Power MOSFET from onsemi, housed in an IPAK (TO-250AA) package. It features a drain-source voltage (Vdss) of 25 V and continuous drain current ratings of 11.2 A at ambient temperature (Ta) and 73 A at case temperature (Tc). The device exhibits a maximum on-resistance (Rds(on)) of 9.3 mΩ at Vgs = 4.5 V and Id = 14 A. Gate charge (Qg) is 19.2 nC max at 4.5 V. Power dissipation is rated at 1.3 W (Ta) and 54.5 W (Tc). Operating junction temperature ranges from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode MOSFET construction for low-side switching applications
• Low on-resistance characteristic optimized for high-efficiency power management
• Robust thermal performance with high case temperature current capability
• Lead-free packaging compliant with RoHS directives

Single FETs, MOSFETs Applications

• DC-DC converter output stages
• Power distribution networks
• Load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm the specific suffix '35G' indicates trimmed leads suitable for through-hole mounting in the IPAK package. Request manufacturer certificates of conformity and material composition declarations to ensure regulatory compliance. Validate lot traceability and storage conditions prior to integration into production lines.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 25 V breakdown with high surge current handling capabilities up to 73 A at the case level. The IPAK package offers superior thermal dissipation compared to standard DPAK variants, making it suitable for higher power density designs. Ensure gate drive voltages remain within the specified limits to maintain optimal Rds(on) performance and prevent gate oxide degradation during operation.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's NTD series of N-channel MOSFETs, designed for general-purpose power switching. The NTD4858NA variant specifically utilizes the IPAK outline, distinguishing it from the tape-and-reel DPAK versions like the NTD4858NT4G. It serves as a legacy or specialized option for through-hole assembly requirements where robust mechanical anchoring and thermal conductivity are prioritized over automated surface-mount placement.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible substitutes include other N-channel 25 V MOSFETs in the IPAK package with comparable Rds(on) and current ratings. Verify that alternative devices meet the same thermal resistance and gate charge specifications to ensure circuit stability without redesigning the PCB footprint or heat sinking infrastructure.