NTD4865NT4G

Single FETs, MOSFETs Overview

The NTD4865NT4G is a single N-channel enhancement mode MOSFET from onsemi, housed in a DPAK (TO-252) surface-mount package. It features a maximum drain-source voltage of 25 V and a continuous drain current of 44 A at case temperature. The device exhibits a typical on-resistance of 10.9 mΩ. Thermal performance includes a power dissipation rating of 33.3 W at case temperature and 1.27 W at ambient temperature. Operating temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration
• Low on-resistance for efficient conduction
• Surface mount DPAK packaging

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power switching applications
• Load management systems

Single FETs, MOSFETs Procurement Notes

Verify component status as the NTD4865NT4G is listed as obsolete by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure compatibility with existing design specifications before procurement. Check for end-of-life notices and recommended replacement parts if necessary.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring compact surface-mount solutions. Consider thermal constraints due to lower ambient power dissipation ratings. Evaluate on-resistance requirements against circuit efficiency goals. Verify package compatibility with PCB layout and soldering processes.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's N-channel MOSFET portfolio designed for general-purpose power switching. The DPAK package offers a balance between current handling capability and board space efficiency. It is suitable for applications where moderate voltage ratings and high current densities are required in a standard surface-mount form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameters such as voltage, current, and resistance when selecting alternatives.