Single FETs, MOSFETs NTD4959NH-35G product image

NTD4959NH-35G

  • Description:MOSFET N-CH 30V 9A/58A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:e939108585a6 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

NTD4959NH-35G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 9A/58A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTD4959NH-35G

  • Description:MOSFET N-CH 30V 9A/58A IPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 11.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2155 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):1.3W (Ta), 52W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Stub Leads, IPAK

Single FETs, MOSFETs datasheet and documents for NTD4959NH-35G

NTD4959NH-35G

Single FETs, MOSFETs Overview

The NTD4959NH-35G is a single N-channel Power MOSFET from onsemi, housed in an IPAK package with trimmed leads. It features a 30 V drain-to-source voltage rating and supports a continuous drain current of up to 58 A at a case temperature of 25°C. The device offers a maximum on-resistance of 9.0 mΩ at 10 V gate drive and 12.5 mΩ at 4.5 V. Key electrical characteristics include a pulsed drain current capability of 130 A, a total gate charge of 29.3 nC at 11.5 V, and a forward transconductance of 9.0 S.

Single FETs, MOSFETs Feature Summary

  • Low RDS(on) designed to minimize conduction losses
  • Optimized gate charge to reduce switching losses
  • Low capacitance specifications to minimize driver losses

Single FETs, MOSFETs Applications

  • CPU power delivery systems
  • DC-DC converters
  • Low side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-35G' corresponds to the IPAK package with trimmed leads (3.5 ± 0.15 mm). Confirm that the component is Pb-Free as indicated by the 'G' designation. Ensure compatibility with the required lead length for your PCB footprint before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for efficient power conversion. The IPAK package provides robust thermal performance suitable for surface-mount applications on FR4 boards. Consider the 30 V rating and 58 A current capacity against your specific load requirements and thermal management constraints.

Single FETs, MOSFETs Part Context

This part belongs to the NTD4959N series of Power MOSFETs manufactured by onsemi. The series utilizes silicon-oxide passivated junction technology within a DPAK/IPAK form factor. The -35G variant specifically denotes the IPAK package configuration with trimmed leads, distinguishing it from standard straight-lead or tape-and-reel versions.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NTD4959NH-35GNTD4959NH-35G

Click on the inquiry

Recent News