NTDV20P06LT4G

Single FETs, MOSFETs Overview

The NTDV20P06LT4G is a single P-Channel power MOSFET from the onsemi NTD series, housed in a DPAK (CASE 369C) surface-mount package. It features a drain-to-source voltage rating of -60 V and a continuous drain current of -15.5 A at 25 °C case temperature. The device has a maximum power dissipation of 65 W under steady-state conditions at 25 °C. Key electrical parameters include a typical drain-to-source on-resistance of 0.130 Ω at VGS = -5.0 V and ID = -7.5 A, and a total gate charge of 15 nC at VGS = -5.0 V, VDS = -48 V, and ID = -18 A. It operates within a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Withstands high energy levels during avalanche and commutation modes
• Features low gate charge characteristics for fast switching performance
• Qualified to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

• Bridge circuits
• Power supplies
• Power motor controls
• DC-DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T4G' corresponds to the tape and reel packaging format containing 2500 units per reel. Confirm that the component is lead-free and RoHS compliant as specified in the datasheet. Check the official onsemi documentation for any discontinuation notices or obsolescence status updates regarding this specific part number before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-Channel MOSFET with a -60 V breakdown voltage and robust avalanche energy handling capabilities. Ensure the thermal design accommodates the junction-to-case thermal resistance of 2.3 °C/W for steady-state operation. Verify that the gate drive voltage aligns with the specified threshold and on-resistance test conditions for optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to the NTD series of power MOSFETs manufactured by onsemi. It utilizes a DPAK surface-mount package designed for efficient heat dissipation. The device is engineered for general-purpose power switching applications where reliability and switching speed are critical factors in system design.

Single FETs, MOSFETs Replacement Considerations

Consult the official onsemi datasheet for discontinued devices section to identify valid substitute part numbers. Do not assume functional equivalence with other P-Channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics against the original specifications.

Single FETs, MOSFETs FAQ

Is the NTDV20P06LT4G qualified for automotive applications?

Yes, the NTDV20P06L variant is qualified to the AEC-Q101 standard.

What is the maximum single pulse drain-to-source avalanche energy?

The maximum single pulse drain-to-source avalanche energy is 304 mJ under specified test conditions.