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NTP65N02R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 25V 7.6A/58A TO220AB. Review the specifications below when checking this part for your BOM.
The NTP65N02RG is a single N-channel Power MOSFET manufactured by onsemi, designed for general-purpose switching applications. It features a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 7.6 A at ambient temperature or 58 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 10.5 mΩ when driven at 10 V with a 20 A load. Key electrical characteristics include a gate charge (Qg) of 9.5 nC at 4.5 V and an input capacitance (Ciss) of 1330 pF at 20 V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220AB through-hole package.
Verify the specific ordering suffix, such as 'G' for RoHS compliance, against the required datasheet revision. Confirm that the TO-220AB package dimensions match the PCB footprint requirements. Check for any product change notices or end-of-life status updates from the manufacturer before finalizing procurement plans.
Select this component for designs operating below 25 V where moderate current levels are sufficient. Ensure the gate drive voltage meets the minimum threshold for optimal Rds(on) performance. Evaluate thermal management strategies based on the specified power dissipation ratings under both ambient and case conditions.
This part belongs to the NTP65N series of N-channel MOSFETs from onsemi. The series focuses on providing cost-effective solutions for low-voltage applications. The NTP65N02RG variant specifically targets scenarios requiring reliable switching with manageable heat generation in standard industrial and consumer electronics environments.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative devices by matching critical parameters such as Vdss, Id, Rds(on), and package type.
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