Single FETs, MOSFETs NVMYS9D3N06CLTWG product image

NVMYS9D3N06CLTWG

$1.33
  • Description:MOSFET N-CH 60V 50A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d8880598287f Category: Brand:

  
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NVMYS9D3N06CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 50A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMYS9D3N06CLTWG

  • Description:MOSFET N-CH 60V 50A DPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:9.2mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
  • Vgs (Max):20V
  • Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.6W (Ta), 46W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NVMYS9D3N06CLTWG

NVMYS9D3N06CLTWG

Single FETs, MOSFETs Overview

The NVMYS9D3N06CLTWG is a single N-channel power MOSFET from onsemi, rated for a drain-to-source voltage of 60 V. It features a maximum continuous drain current of 50 A at a case temperature of 25 °C and a low on-resistance of 9.2 mΩ at a gate-to-source voltage of 10 V. The device utilizes an LFPAK4 (5x6 mm) package to support compact designs while maintaining high thermal performance. It is qualified under the AEC-Q101 standard and is capable of PPAP submission, making it suitable for automotive applications.

Single FETs, MOSFETs Feature Summary

  • Small footprint design utilizing a 5x6 mm LFPAK4 package for space-constrained layouts
  • Low on-resistance characteristics to minimize conduction losses during operation
  • Reduced gate charge and capacitance values to lower driver losses
  • Automotive-grade qualification compliant with AEC-Q101 standards

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TWG to confirm tape and reel packaging containing 3000 units per reel. Ensure the component meets RoHS compliance and lead-free manufacturing requirements as specified in the datasheet. Confirm that the AEC-Q101 qualification aligns with your project's reliability standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V rating and high current handling capability are required in a small surface-mount package. Consider the thermal resistance values and operating temperature range of -55 °C to +175 °C for your specific heat dissipation needs. Evaluate the gate charge specifications against your driver capabilities to ensure efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the NVMYS series of single N-channel MOSFETs designed by onsemi. The series focuses on providing robust performance in compact packages suitable for modern electronic designs. The LFPAK4 package offers industry-standard compatibility, facilitating integration into existing board layouts without requiring significant redesign.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the NVMYS family or other 60 V LFPAK4 MOSFETs. Verify pinout compatibility and electrical parameters such as RDS(on) and QG before substitution. Ensure any replacement also meets AEC-Q101 requirements if used in automotive contexts.

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