PBSS5250TH-QR

Single Bipolar Transistors Overview

The PBSS5250TH-Q is a PNP low VCEsat transistor manufactured by Nexperia, housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. It features a collector-emitter voltage of -50 V and a continuous collector current capability of -2 A, with a peak pulse current of -3 A. The device exhibits a maximum collector-emitter saturation resistance of 150 mΩ at -2 A collector current. Total power dissipation ranges from 360 mW to 700 mW depending on PCB mounting conditions. Junction temperature support extends up to 175 °C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for improved efficiency
• High collector current gain maintained at elevated currents
• Qualified according to AEC-Q101 for automotive reliability
• Supports high-temperature applications up to 175 °C

Single Bipolar Transistors Applications

• Power management systems
• DC-to-DC conversion circuits
• Supply line switches
• Battery charger switches
• Peripheral drivers and inductive load drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and manufacturing site codes. Ensure compatibility with standard SOT23 footprints during design integration. Confirm that the selected variant meets the required thermal dissipation constraints for the intended PCB layout and ambient operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-efficiency switching with minimal voltage drop across the collector-emitter path. The SOT23 package offers a compact solution for space-constrained layouts. Consider the thermal resistance characteristics relative to the specific FR4 PCB layer count and copper pad size to ensure adequate heat dissipation under continuous load conditions.

Single Bipolar Transistors Part Context

This part belongs to the PBSS5250 series of low VCEsat transistors designed for high-current switching applications. The 'Q' suffix indicates qualification according to AEC-Q101 standards, making it suitable for automotive environments. The device utilizes BISS technology to achieve superior performance compared to standard bipolar transistors in similar packages.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the PBSS5250PAS-Q, which utilizes a DFN2020D-3 leadless package instead of the SOT23 form factor. Designers must account for differences in thermal dissipation capabilities and physical footprint dimensions when transitioning between these package types.

Single Bipolar Transistors FAQ

What is the maximum junction temperature rating for the PBSS5250TH-Q?

The device supports high-temperature applications with a maximum junction temperature of 175 °C.

How does the PBSS5250TH-Q differ from standard PNP transistors?

It features significantly lower collector-emitter saturation voltage and higher current gain at high currents, leading to increased efficiency and reduced heat generation.

Is the PBSS5250TH-Q suitable for automotive applications?

Yes, the product has been qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.