PBSS5320T-QR

Single Bipolar Transistors Overview

The PBSS5320T-QR is a PNP low VCEsat transistor manufactured by Nexperia, housed in an SOT23 (TO-236AB) surface-mount package. It features a collector-emitter voltage of -20 V and a continuous collector current of -2 A, with a repetitive peak current capability of -3 A. The device exhibits a typical collector-emitter saturation resistance of 75 mΩ and a minimum DC current gain of 100 at high currents. Qualified under the AEC-Q101 standard, it supports junction temperatures up to 150 °C and includes thermal resistance values ranging from 104 K/W to 480 K/W depending on PCB mounting conditions.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage and corresponding low on-resistance for improved efficiency
• High collector current capability with significant peak pulse tolerance
• AEC-Q101 qualified for automotive application reliability
• Small SOT23 plastic surface-mount package design

Single Bipolar Transistors Applications

• Power management applications
• Low and medium power DC/DC converters
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out (LDO)

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required tape-and-reel packaging configuration. Confirm the specific manufacturing site code associated with the marking prefix. Ensure the procurement documentation references the correct AEC-Q101 qualification status. Cross-check the pinout assignment against the target PCB footprint dimensions. Validate compliance with RoHS directives prior to finalizing purchase orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring efficient PNP switching with minimal voltage drop. Consider the thermal resistance characteristics relative to the intended PCB copper area. Evaluate the base drive requirements to maintain the transistor within the specified saturation region. Verify that the operating temperature range aligns with the system's environmental constraints and duty cycle limitations.

Single Bipolar Transistors Part Context

This device belongs to the PBSS5320T-Q series of low saturation voltage transistors. It serves as the PNP complement to the NPN PBSS4320T model. The product utilizes silicon technology optimized for high current handling in compact packages. It is designed to replace older discrete solutions in modern portable and automotive electronics.

Single Bipolar Transistors Replacement Considerations

The NPN complement is the PBSS4320T. Designers should verify pin compatibility if substituting with other PNP devices in the same package family. Check saturation voltage curves to ensure equivalent performance in the target circuit.

Single Bipolar Transistors FAQ

What is the maximum repetitive peak collector current?

The maximum repetitive peak collector current is -3 A under pulsed conditions with a duty cycle of 0.25 or less.

How is the device marked?

The marking code consists of 'ZH' followed by a placeholder character representing the manufacturing site code.

What is the transition frequency specification?

The transition frequency is typically 100 MHz when measured at a collector current of -100 mA and a collector-emitter voltage of -5 V.