Single Bipolar Transistors PBSS8110T-QR product image

PBSS8110T-QR

$0.09
  • Description:TRANS NPN 100V 1A TO-236AB
  • Series:-

SKU:8e37245e0f34 Category: Brand:

  
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PBSS8110T-QR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 100V 1A TO-236AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBSS8110T-QR

  • Description:TRANS NPN 100V 1A TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 250mA, 10V
  • Power - Max:300 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for PBSS8110T-QR

PBSS8110T-QR

Single Bipolar Transistors Overview

The PBSS8110T-Q is an NPN low VCEsat transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter voltage of 100 V and supports a continuous collector current of 1 A, with a peak pulse current capability of 3 A. The device features a typical collector-emitter saturation resistance of 165 mΩ at IC = 1 A and IB = 100 mA. It is housed in a small SOT23 (TO-236AB) surface-mount plastic package with three terminals. The component is qualified according to the AEC-Q101 standard for automotive applications.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching
  • High collector current capability supporting both continuous and peak loads
  • Qualified according to AEC-Q101 for automotive reliability

Single Bipolar Transistors Applications

  • Automotive 42 V power systems
  • Telecom infrastructure equipment
  • Industrial control circuits
  • DC/DC converters and power management units
  • Inductive load drivers such as relays and motors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix and marking code against the official datasheet before procurement. Confirm that the received components match the SOT23 package dimensions and pin configuration. Ensure compliance with the AEC-Q101 qualification requirements if the application demands automotive-grade standards. Check the latest product status on the manufacturer website to confirm production availability.

Single Bipolar Transistors Selection Notes

Select this component when a low saturation voltage is critical for minimizing power loss in high-current switching applications. The SOT23 package is suitable for space-constrained designs requiring surface-mount technology. Consider the thermal resistance characteristics and derating curves when designing for high ambient temperatures or limited PCB copper area. Ensure the base drive current is sufficient to maintain the transistor in deep saturation.

Single Bipolar Transistors Part Context

This part belongs to the PBSS series of low VCEsat transistors from Nexperia. It serves as an NPN counterpart to the PNP PBSS9110T-Q. The series is designed for general-purpose switching and amplification where low voltage drop and high current handling are required. The device is specifically engineered to meet the rigorous reliability standards of the automotive electronics industry.

Single Bipolar Transistors Replacement Considerations

The PNP complement is the PBSS9110T-Q. Verify pinout compatibility and electrical parameters when substituting with other NPN transistors from different manufacturers.

PBSS8110T-QRPBSS8110T-QR
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