PHX45NQ11T,127

Single FETs, MOSFETs Overview

The PHX45NQ11T is an N-channel TrenchMOS™ standard level FET in a fully isolated encapsulated plastic package. It features a drain-source voltage (VDS) of 110 V and a continuous drain current (ID) up to 30.4 A at Th=25°C. The device has a maximum on-state resistance (RDSon) of 25 mΩ at VGS=10V and ID=25A. Total power dissipation (Ptot) is 62.5 W at Th=25°C. Peak drain current (IDM) reaches 121 A pulsed. The junction temperature range is -55°C to +150°C. Thermal resistance from junction to heatsink (Rth(j-h)) is typically 2 K/W. Isolation voltage (Visol) is 2500 V RMS.

Single FETs, MOSFETs Feature Summary

• Fully isolated encapsulated plastic package with mounting base for thermal management
• Low on-state resistance utilizing TrenchMOS™ technology
• High isolation voltage capability between terminals and external heatsink

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Switched-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and product status before design finalization, as specifications may change. Confirm that the SOT186A (TO-220F) package dimensions match your mechanical constraints. Ensure the application environment remains within the specified junction temperature limits (-55°C to +150°C). Check for any Customer Product/Process Change Notifications (CPCN) regarding manufacturing updates or material changes since the original publication date.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high isolation voltage and moderate switching speeds. The TO-220F package facilitates direct heatsinking via the mounting base. Consider the thermal resistance and power dissipation limits when designing the cooling solution. Verify gate charge characteristics against drive circuit capabilities for efficient switching performance in power conversion topologies.

Single FETs, MOSFETs Part Context

This device belongs to the N-channel enhancement mode field-effect transistor family using TrenchMOS™ technology. It is designed for general-purpose power switching applications where electrical isolation between the circuit and the heatsink is required. The product was originally published by Philips Semiconductors and is now part of the NXP portfolio.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for equivalent N-channel MOSFETs with similar voltage, current, and isolation ratings. Verify pinout compatibility and thermal characteristics when substituting.