PJQ1906_R1_00201

$0.29

Description：20V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4cd7a116db5d Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

PJQ1906_R1_00201 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 20V N-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJQ1906_R1_00201

Description：20V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：1.2Ohm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for PJQ1906_R1_00201

PJQ1906_R1_00201

Single FETs, MOSFETs Overview

The PJQ1906_R1_00201 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in a DFN1006-3L package. The device supports a continuous drain current of 300mA and a pulsed drain current of 600mA. Key electrical parameters include a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) rating of ±10V, and a power dissipation of 700mW at 25°C. The junction temperature range spans from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced Trench Process Technology
ESD Protected
Specially Designed for Switch Load
Lead free in compliance with EU RoHS 2.0

Single FETs, MOSFETs Applications

Switch load applications
PWM application circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix R1_00201 against official Panjit documentation to confirm packaging details. Confirm that the component meets the required environmental standards, specifically RoHS 2.0 compliance and IEC 61249 green molding compound specifications. Ensure thermal management aligns with the specified 175°C/W junction-to-ambient resistance.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching tasks requiring a compact surface-mount footprint. The DFN1006-3L package offers a small form factor suitable for space-constrained designs. Consider the 300mA continuous current limit and the 700mW power dissipation capability when designing the thermal environment for the circuit.

Single FETs, MOSFETs Part Context

This part belongs to the PJQ1906 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series focuses on low-voltage applications utilizing trench technology. The manufacturer provides ECAD models and detailed datasheets to support integration into electronic designs.