PMPB14XNX

Single FETs, MOSFETs Overview

The Nexperia PMPB14XN is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) surface-mount package with dimensions of 2 mm x 2 mm x 0.65 mm. The device features a drain-source voltage rating of 40 V and a continuous drain current of 11.5 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 18 mΩ at VGS = 4.5 V, a gate-source threshold voltage ranging from 0.4 V to 0.9 V, and a total gate charge of 28 nC. The component supports junction temperatures up to 150 °C.

Single FETs, MOSFETs Feature Summary

• Trench MOSFET technology enables very fast switching speeds and low threshold voltage operation.
• Leadless DFN2020MD-6 package design includes side wettable flanks for optical solder inspection.
• Exposed drain pad provides excellent thermal conduction capabilities.

Single FETs, MOSFETs Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the requested variant matches the required automotive or industrial qualification status, as standard versions may differ from qualified counterparts. Cross-reference the datasheet revision date with current production status to avoid obsolete stock.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring compact footprint and high thermal efficiency in low-voltage applications. The low gate threshold voltage facilitates direct interfacing with logic-level drivers. Ensure the PCB layout accommodates the exposed drain pad for optimal heat dissipation, as thermal performance is heavily dependent on copper area and mounting conditions specified in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PMPB series of medium power N-channel MOSFETs. These devices are engineered for general-purpose power switching where space constraints and thermal management are critical. The series utilizes advanced trench technology to deliver low on-resistance within ultra-thin packages suitable for portable and dense electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 40V rating, N-channel configuration, and DFN2020MD-6 package. Verify pinout compatibility and thermal resistance characteristics before integration.