PN3566 TIN/LEAD

Single Bipolar Transistors Overview

The PN3566 is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and supports a collector-emitter voltage of 30 V and a collector-base voltage of 40 V. The device handles a continuous collector current of 600 mA with a power dissipation rating of 625 mW. Operating temperatures range from -65°C to +150°C. DC current gain (hFE) ranges from a minimum of 80 at 2 mA to a maximum of 600 at 10 mA.

Single Bipolar Transistors Feature Summary

• NPN silicon construction for reliable switching and amplification
• High DC current gain capability across specified operating currents
• Through-hole mounting in a compact TO-92-3 leaded package

Single Bipolar Transistors Applications

• General-purpose signal amplification circuits
• Electronic switching applications
• Low-power analog circuit design

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering, as packaging formats such as Ammo Pack or Reel may differ while maintaining identical electrical characteristics. Confirm RoHS compliance status and tin/lead plating requirements against project specifications. Ensure the selected variant matches the required tape and reel quantity multiples if automated assembly is planned.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate current handling within a standard three-lead through-hole footprint. The high hFE range allows for efficient base drive requirements in amplifier stages. Verify that the 625 mW thermal limit accommodates the expected power dissipation under worst-case ambient conditions without additional heatsinking.

Single Bipolar Transistors Part Context

This part belongs to the PN3566 series of small-signal NPN transistors produced by Central Semiconductor. It serves as a discrete semiconductor solution for general electronics, distinct from higher-voltage PNP variants like the MPSA92 or Darlington configurations. The TIN/LEAD designation indicates the terminal finish composition.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN TO-92 transistors offering similar 30V VCEO and 600mA IC ratings. Verify pinout compatibility and ensure replacement devices meet or exceed the original hFE and power dissipation specifications.