PSMN1R5-25YL,115

Single FETs, MOSFETs Overview

The PSMN1R5-25YL,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an LFPAK (SOT669) plastic package. It features a drain-source voltage of 25 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 1.5 mΩ at VGS = 10 V and 2.2 mΩ at VGS = 4.5 V. Total gate charge is typically 36 nC at VGS = 4.5 V and 76 nC at VGS = 10 V. Power dissipation reaches 109 W at 25 °C, with junction temperatures supported from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• High efficiency achieved through low switching and conduction losses
• Compatible with logic level gate drive sources

Single FETs, MOSFETs Applications

• Class-D amplifiers
• DC-to-DC converters
• Motor control
• Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Ensure the component meets industrial and communications application requirements as defined in the product data sheet. Cross-reference thermal characteristics and limiting values with system design constraints before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring logic level gate drive compatibility and high current handling within a compact surface-mount footprint. Evaluate thermal management strategies based on the specified junction-to-mounting base thermal resistance and power dissipation limits under varying ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia TrenchMOS portfolio, designed for industrial and communications sectors. It employs TrenchMOS technology to optimize performance in plastic packages. The LFPAK form factor provides robust surface-mount integration suitable for demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Do not assume functional equivalence with other MOSFETs without verifying pinout, voltage ratings, and thermal specifications.