PSMN2R2-40YSDX

Single FETs, MOSFETs Overview

The Nexperia PSMN2R2-40YSD is a standard level gate drive N-channel enhancement mode MOSFET utilizing NextPower-S3 Schottky-Plus technology. It features a 40 V drain-source voltage rating and a typical on-state resistance of 1.9 mΩ at 25 °C, supporting a continuous drain current of 180 A. The device operates within a junction temperature range of -55 °C to 175 °C and includes avalanche ruggedness rated at 160 A. Packaged in an LFPAK56 (SOT669) surface-mount format with exposed leads for thermal management.

Single FETs, MOSFETs Feature Summary

• NextPower-S3 technology enables superfast switching with soft body-diode recovery for low EMI designs.
• Schottky-Plus body-diode provides low forward voltage, low reverse recovery charge, and low leakage current.
• High reliability LFPAK package qualified to 175 °C with copper-clip and solder die attach for low parasitic inductance.
• Avalanche rated and 100% tested for robust performance in demanding power switching applications.

Single FETs, MOSFETs Applications

• High-performance synchronous rectification
• DC-to-DC converters
• Brushless DC motor control
• Battery protection systems
• Load-switch and eFuse implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before purchase. Confirm that the component status remains in production as specified in the latest datasheet revision. Ensure design compatibility with the LFPAK56 footprint and thermal requirements. Check for any recent updates to the product longevity program or supply chain notifications from Nexperia.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power switching where low conduction losses are critical. The standard level gate drive requires appropriate voltage levels for optimal RDSon performance. Consider the thermal resistance characteristics when designing PCB layouts for heat dissipation. Evaluate the avalanche energy ratings against potential transient conditions in the target circuit.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower-S3 family of N-channel MOSFETs designed for high-performance applications. It utilizes advanced TrenchMOS Superjunction technology to achieve superior switching speeds and reduced dynamic losses compared to conventional planar devices. The LFPAK56 package offers improved thermal performance and mechanical stability for surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

PSMN2R2-40BS

Single FETs, MOSFETs FAQ

What technology does the PSMN2R2-40YSD use for its body diode?

It uses Nexperia's unique Schottky-Plus technology, which delivers Schottky-like switching performance with low IDSS leakage and soft body-diode recovery.

Is the PSMN2R2-40YSD avalanche rated?

Yes, the device is avalanche rated and 100% tested at IAS = 160 A, ensuring robustness in demanding applications.