PSMP075N15NS1_T0_00601

$4.61

Description：150V N-CHANNEL ENHANCEMENT MODE
Series：-
Mfr：Panjit International Inc.
Package：Tube

SKU:e4e6ff6e17fc Category: Single FETs, MOSFETs Brand: Panjit International Inc.

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Product introduction

PSMP075N15NS1_T0_00601 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 150V N-CHANNEL ENHANCEMENT MODE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMP075N15NS1_T0_00601

Description：150V N-CHANNEL ENHANCEMENT MODE
Series：-
Mfr：Panjit International Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
Rds On (Max) @ Id, Vgs：7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：97 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6511 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：258.6W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB-L
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for PSMP075N15NS1_T0_00601

PSMP075N15NS1_T0_00601

Single FETs, MOSFETs Overview

The PSMP075N15NS1 is a 150V N-Channel enhancement mode MOSFET manufactured by Panjit International Inc. It utilizes TO-220AB-L packaging and features an extremely low on-state resistance of 7.5mΩ maximum at VGS=10V, ensuring minimal conduction losses. The device supports continuous drain currents up to 125A at 25°C case temperature and handles pulsed currents of 350A. With a thermal resistance (RθJC) of 0.58°C/W and a junction temperature range of -55°C to 175°C, it provides robust thermal performance for high-power applications.

Single FETs, MOSFETs Feature Summary

High-speed switching capability combined with low RDS(on) to minimize power dissipation.
Guaranteed 100% avalanche testing for enhanced ruggedness and reliability under transient conditions.
Compliant with EU RoHS 2.0 standards and utilizing green molding compound per IEC 61249.
Optimized gate charge characteristics for efficient drive requirements.

Single FETs, MOSFETs Applications

Battery Management Systems (BMS)
Brushless DC Motor (BLDC) drives
Synchronous Rectification in Switching Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm compliance documentation aligns with regional regulatory requirements. Check datasheet revisions for any updates to electrical limits or mechanical dimensions before finalizing design integration.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction loss are critical. Ensure adequate heatsinking to maintain junction temperatures within the specified 175°C limit during continuous operation. Evaluate gate drive voltage levels against the 7V and 10V RDS(on) specifications for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Panjit's high-voltage N-Channel MOSFET portfolio designed for power conversion and motor control. It represents a standard through-hole solution offering a balance between high current capacity and manageable thermal resistance for industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinout compatibility and thermal resistance values. Verify that substitute parts meet or exceed the 150V breakdown voltage and 125A continuous current ratings. Ensure equivalent avalanche energy capabilities if used in inductive load switching scenarios.