RQA0004PXDQS#H1

Single FETs, MOSFETs Overview

The RQA0004PXDQS is a silicon N-Channel MOS FET designed for high output power and efficiency. It features a compact UPAK surface-mount package with RENESAS Package code PLZZ0004CA-A. The device supports a drain-to-source voltage of 16 V, gate-to-source voltage of ±5 V, and a maximum drain current of 0.3 A. At 520 MHz with VDS = 6 V and IDQ = 50 mA, it delivers an output power of +29.7 dBm and a Power Added Efficiency (PAE) of 68%. Input capacitance is typically 10 pF at 1 MHz.

Single FETs, MOSFETs Feature Summary

• High output power and efficiency optimized for RF applications
• Compact UPAK package suitable for surface mounting
• Integrated thermal dissipation capabilities

Single FETs, MOSFETs Applications

• RF power amplification in communication systems
• Wireless infrastructure equipment
• Industrial radio frequency heating

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official Renesas documentation to confirm specific packaging or tape-and-reel configurations. Confirm that the component status aligns with your design lifecycle requirements before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high efficiency at sub-GHz frequencies. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding channel temperature and electrostatic discharge handling during assembly.

Single FETs, MOSFETs Part Context

This part belongs to the Renesas Electronics portfolio of discrete semiconductor devices. It is categorized as a silicon N-Channel MOS FET intended for general-purpose RF power amplification tasks where size constraints and performance metrics are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Renesas datasheets for verified substitute part numbers. Cross-reference electrical characteristics such as breakdown voltage and forward transfer admittance to ensure functional compatibility.