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RSQ025P03HZGTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET P-CH 30V 2.5A TSMT6. Review the specifications below when checking this part for your BOM.
The RSQ025P03HZGTR is a P-channel small-signal MOSFET manufactured by ROHM Semiconductor. It features a -30V drain-source voltage and ±2.5A continuous drain current capability. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.25W. Key electrical parameters include a gate threshold voltage of -1.0V to -2.5V, a total gate charge of 4.4nC, and a static drain-source on-state resistance of up to 110mΩ at VGS=-10V. It is housed in a TSMT6 (SOT-457T) surface-mount package.
Verify the specific ordering suffix TR against official documentation to confirm packaging details such as reel size and tape width. Ensure that the component meets all required environmental specifications, including operating temperature ranges and RoHS compliance, before finalizing procurement plans.
Select this component when a P-channel MOSFET with a -30V rating and ±2.5A current capacity is required. Consider the TSMT6 package dimensions for board space constraints. Verify that the drive voltage aligns with the specified gate threshold and on-state resistance characteristics for optimal performance.
This part belongs to the RSQ series of small-signal MOSFETs from ROHM Semiconductor. The series includes both N-channel and P-channel variants designed for compact surface-mount applications. The RSQ025P03HZGTR specifically addresses the need for reliable switching in automotive and industrial environments.
RSQ025P03FRATR is listed as a recommended replacement with the same pinout and package.
The maximum pulsed drain current is ±10A, provided the pulse width is ≤10μs and the duty cycle is ≤1%.
Yes, the RSQ025P03HZGTR features a built-in Gate-Source (G-S) protection diode.
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