Single FETs, MOSFETs S2M0160120T product image

S2M0160120T

$4.86
  • Description:MOSFET SILICON CARBIDE SIC 1200V
  • Series:-
  • Mfr:SMC Diode Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:445f9c1a511f Category: Brand:

  
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S2M0160120T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists SMC Diode Solutions. Its product description is MOSFET SILICON CARBIDE SIC 1200V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for S2M0160120T

  • Description:MOSFET SILICON CARBIDE SIC 1200V
  • Series:-
  • Mfr:SMC Diode Solutions
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for S2M0160120T

S2M0160120T

Single FETs, MOSFETs Overview

The S2M0160120T is a single Silicon Carbide (SiC) Power MOSFET packaged in a TOLL case. It features a 1200 V drain-source voltage and a continuous drain current of 17 A at 25°C. The device exhibits a typical on-resistance of 175 mΩ and supports a power dissipation of 121 W. It includes a robust intrinsic body diode with a reverse recovery time of 6.6 ns. The component operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage n-channel enhancement mode construction utilizing Silicon Carbide technology for low conduction losses.
  • Positive temperature characteristics facilitating easy parallel operation.
  • Fast switching speed combined with low switching losses for high-frequency applications.
  • Robust intrinsic body diode designed for challenging environments.

Single FETs, MOSFETs Applications

  • EV Fast Charging Modules
  • Solar Inverters
  • Online UPS / Industrial UPS
  • SMPS (Switch Mode Power Supplies)
  • DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T' corresponds to the reel shipping configuration of 1800 pieces per reel as documented in the manufacturer's ordering information. Confirm that the TOLL package marking diagram aligns with your assembly requirements. Ensure compatibility with the specified thermal resistance values for your heat sink design.

Single FETs, MOSFETs Selection Notes

Select this component for energy-sensitive, high-frequency applications requiring stable switching characteristics over extreme temperatures. The low total gate charge and fast reverse recovery make it suitable for efficient power conversion. Consider the 175 mΩ on-resistance for thermal management calculations under continuous load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the SMC Diode Solutions SiC Power MOSFET lineup, specifically designed for high-voltage power electronics. The 'S2M' prefix identifies the device type, while '0160' indicates the on-resistance class and '120' denotes the 1200V rating. It is distinct from standard silicon MOSFETs due to its wide bandgap material properties.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum AC gate-source voltage is -10 to +25 V, while the recommended operational value is -5 to +20 V.

How does the on-resistance change at high temperatures?

At a junction temperature of 175°C, the maximum on-resistance increases to 300 mΩ compared to the typical 175 mΩ at 25°C.

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