SI2307BDS-T1-E3

Single FETs, MOSFETs Overview

The SI2307BDS-T1-E3 is a P-Channel MOSFET utilizing TrenchFET technology, housed in an SOT-23 (TO-236) package. It features a drain-source voltage of -30 V and a continuous drain current of -3.2 A at 25 °C. The on-resistance is 0.078 Ω at VGS = -10 V and 0.130 Ω at VGS = -4.5 V. Gate threshold voltage ranges from -1.0 V to -3.0 V. Total gate charge is typically 9.0 nC. Operating junction temperature spans -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• Lead-free construction with halogen-free option available
• Enhanced low on-resistance characteristics

Single FETs, MOSFETs Applications

• Power management circuits
• Load switches
• Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm lead-free or halogen-free status. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the procurement channel provides valid traceability for the semiconductor batch. Validate that the received part matches the exact marking code L7 to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-Channel solution is required for low-voltage applications. The SOT-23 package suits space-constrained designs. Verify that the gate drive voltage aligns with the specified RDS(on) thresholds. Consider thermal dissipation limits based on the PCB copper area and ambient operating conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix Si2307 series of single N- and P-channel MOSFETs. It is designed as a direct replacement for legacy TO-236 devices while offering improved switching speeds and lower on-resistance. The product line focuses on portable electronics and battery-powered equipment requiring efficient power control.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for cross-reference recommendations. Verify pinout compatibility and thermal resistance values before substitution.

Single FETs, MOSFETs FAQ

What is the maximum source-drain diode forward voltage?

The source-drain diode forward voltage is typically -0.85 V and reaches a maximum of -1.2 V at a source current of -0.75 A.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Normalized thermal transient impedance data indicates higher resistance at elevated temperatures compared to 25 °C.