SI4456DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4456DY-T1-GE3 is a single N-channel Power MOSFET utilizing TrenchFET Gen II technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 33 A at 25 °C case temperature. The device exhibits a low on-state resistance of 3.8 mΩ at VGS = 10 V and 4.5 mΩ at VGS = 4.5 V. Key dynamic parameters include a typical total gate charge of 37.5 nC at VGS = 4.5 V and 81 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen II power MOSFET architecture for optimized performance
• 100% tested for gate resistance and unclamped inductive switching (UIS)
• Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

• Secondary rectification circuits
• Point-of-load DC/DC conversion modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it defines lead-free and halogen-free compliance status. Confirm that the component matches the exact datasheet revision referenced during design validation. Ensure procurement channels provide traceable manufacturing lot data to maintain quality assurance standards throughout the supply chain.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses at moderate gate drive voltages. The 4.5 V threshold makes it suitable for logic-level control applications. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values for your specific PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si4456DY series, which utilizes advanced TrenchFET technology to achieve high current density in compact packages. The product line is designed for efficient power switching in space-constrained electronic systems requiring robust reliability under standard operating conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching critical electrical ratings such as breakdown voltage, on-resistance, and package dimensions to ensure functional compatibility without redesigning the host circuitry.