SI4896DY-T1-E3

$1.97

Description：MOSFET N-CH 80V 6.7A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:caa0ab921749 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI4896DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 80V 6.7A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4896DY-T1-E3

Description：MOSFET N-CH 80V 6.7A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4896DY-T1-E3

SI4896DY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si4896DY is an N-channel 80-V (D-S) MOSFET utilizing TrenchFET technology. It operates in an SO-8 package with a drain-source voltage of 80 V and a continuous drain current of 9.5 A at 25 °C. The device features a maximum on-state resistance of 0.0165 Ω at VGS = 10 V and 0.022 Ω at VGS = 6.0 V. Thermal performance includes a junction-to-ambient resistance of 65 °C/W steady state. It supports a maximum power dissipation of 3.1 W at 25 °C and operates within a temperature range of -55 to 150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET power MOSFET technology for optimized performance
Compliant with RoHS Directive 2002/95/EC
Halogen-free construction according to IEC 61249-2-21 definition

Single FETs, MOSFETs Applications

General-purpose switching applications
Power management circuits requiring low on-resistance
DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components, as variants such as Si4896DY-T1-E3 and Si4896DY-T1-GE3 exist. Confirm that the selected part meets lead-free and halogen-free requirements if mandated by project specifications. Cross-reference datasheet document number 71300 to ensure alignment with the latest technical parameters before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its 80-V drain-source voltage rating and 9.5-A continuous current capability. Evaluate thermal constraints carefully, considering the 65 °C/W junction-to-ambient resistance under steady-state conditions. Ensure gate drive voltages align with the specified thresholds for optimal on-state resistance performance. Validate package compatibility with the SO-8 footprint during PCB layout design.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si4896 family of N-channel MOSFETs. It is manufactured using advanced TrenchFET technology to achieve low on-state resistance. The device is housed in an SO-8 surface-mount package, designed for efficient heat dissipation and compact circuit integration. It serves as a reliable switching element in various electronic systems.