Single FETs, MOSFETs SI7450DP-T1-GE3 product image

SI7450DP-T1-GE3

$2.61
  • Description:MOSFET N-CH 200V 3.2A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:23c46dddec80 Category: Brand:

  
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SI7450DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 3.2A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7450DP-T1-GE3

  • Description:MOSFET N-CH 200V 3.2A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:80mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.9W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7450DP-T1-GE3

SI7450DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7450DP-T1-GE3 is a single N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 200 V drain-source voltage rating and an on-state resistance of 80 mΩ at VGS = 10 V. The device supports a continuous drain current of 5.3 A at TJ = 150°C and operates within a junction temperature range of -55°C to +150°C. Packaged in a leadless PowerPAK SO-8 with a 1.07 mm profile, it offers low thermal resistance for efficient heat dissipation.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET technology optimized for fast switching applications
  • Low thermal resistance PowerPAK SO-8 package with a 1.07 mm profile
  • Leadless design providing direct thermal path to the substrate

Single FETs, MOSFETs Applications

  • Primary side switch for high density DC/DC converters
  • Telecom and server 48 V DC/DC conversion
  • Industrial and 42 V automotive systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm RoHS compliance status via the specific datasheet revision. Ensure the ordering suffix matches the required halogen-free specification. Validate that the package type corresponds to the leadless PowerPAK SO-8 configuration before integration into the supply chain.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V breakdown voltage is required alongside low conduction losses. The PowerPAK SO-8 package provides superior thermal performance compared to standard SO-8 while maintaining footprint compatibility. Consider the gate charge and threshold voltage specifications to ensure compatibility with the intended driver circuitry for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si7450DP series of N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint as the standard SO-8 but accommodates a larger die size for improved thermal handling. The series is designed for general-purpose switching applications requiring robust performance in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements may include other Vishay TrenchFET devices in the PowerPAK SO-8 package with matching voltage and current ratings. Verify that any substitute maintains equivalent or lower RDS(on) and compatible gate charge characteristics to preserve circuit performance.

SI7450DP-T1-GE3SI7450DP-T1-GE3
$2.61
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