SIR5812DP-T1-RE3

Single FETs, MOSFETs Overview

The SIR5812DP-T1-RE3 is a single N-channel PowerTrench MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8S surface-mount package. The device features a drain-source breakdown voltage (Vds) of 80 V and a continuous drain current (Id) of 42.8 A. Its maximum on-resistance (Rds(on)) is 13.5 mOhms at a gate-source voltage (Vgs) of 10 V. The component operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 44.6 W.

Single FETs, MOSFETs Feature Summary

• Employs TrenchFET technology for optimized low on-resistance performance
• Designed for high-efficiency switching applications via enhanced channel mode
• Utilizes a compact PowerPAK-SO-8S surface-mount footprint

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Load switching modules

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Vishay documentation to ensure correct packaging and specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Cross-reference the specific ordering code with authorized distributors to validate authenticity and supply chain integrity before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when an 80 V N-channel MOSFET with a 42.8 A current rating is required. Ensure the application voltage does not exceed the 20 V gate-source limit. Verify that the thermal requirements align with the 44.6 W power dissipation capability in the PowerPAK-SO-8S package.

Single FETs, MOSFETs Part Context

This part belongs to the SIR series of N-channel MOSFETs from Vishay Siliconix. These devices are engineered for general-purpose power switching using silicon TrenchFET technology. The series offers various voltage and current ratings packaged in standard surface-mount formats for efficient PCB integration.