SIS862ADN-T1-GE3

$0.92

Description：MOSFET N-CH 60V 15.8A/52A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4f9e0623d1b9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIS862ADN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 15.8A/52A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIS862ADN-T1-GE3

Description：MOSFET N-CH 60V 15.8A/52A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：15.8A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1235 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 39W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SIS862ADN-T1-GE3

SIS862ADN-T1-GE3

Single FETs, MOSFETs Overview

The SIS862ADN-T1-GE3 is a Vishay Siliconix N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 60 V drain-source voltage and a maximum continuous drain current of 52 A at TC = 25 °C. The device offers a typical total gate charge of 19.8 nC and a maximum on-state resistance of 0.011 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK 1212-8, it supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Optimized for low RDS(on) x Qg figure-of-merit
Tuned for the lowest RDS(on) x Qoss figure-of-merit
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Synchronous rectification
Primary side switch
DC/DC converter
Motor drive switch
Circuit protection
Load switch

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official Vishay documentation. Confirm compliance status through RoHS and REACH-SVHC declarations provided in the datasheet. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Validate package dimensions against the PowerPAK 1212-8 drawing before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency and fast switching speeds within a 60 V system. The low gate charge facilitates reduced driver requirements and lower switching losses. Evaluate thermal management needs based on the specified junction-to-case thermal resistance. Ensure the operating environment remains within the defined temperature limits for reliable performance.

Single FETs, MOSFETs Part Context

This single N-channel MOSFET belongs to the SiS series from Vishay Siliconix. It utilizes silicon technology and is housed in a surface-mount PowerPAK 1212-8 package. The device is designed for general-purpose power switching applications where compact size and high current handling capabilities are critical design parameters.