SPB80N06S08ATMA1

Single FETs, MOSFETs Overview

The SPB80N06S-08 is an N-channel SIPMOS power transistor manufactured by Infineon Technologies. It features a PG-TO263-3-2 package and operates with a drain-source voltage of 55 V and a continuous drain current of 80 A at 25 °C. The device exhibits a maximum on-state resistance of 7.7 mΩ and supports a pulsed drain current of 320 A. It is qualified to AEC-Q101 standards, withstands repetitive avalanche conditions up to 175 °C, and offers a reverse diode dv/dt rating of 6 kV/µs.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability
• Capable of handling repetitive avalanche energy up to 175 °C junction temperature
• High reverse diode dv/dt rating of 6 kV/µs
• Green package compliant with RoHS requirements

Single FETs, MOSFETs Applications

• Automotive power switching circuits
• Low-side motor control applications
• General-purpose power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required package variant, as the datasheet lists distinct codes for PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1 configurations. Confirm that the component meets the necessary automotive qualification standards if deployed in vehicle electronics. Ensure thermal management designs account for the specified thermal resistance values to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with high surge current capability and avalanche ruggedness is required. The device is suitable for applications demanding low conduction losses and high switching speeds within a standard surface-mount footprint. Consider the specific thermal constraints and gate drive requirements to ensure optimal performance in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the SIPMOS family from Infineon Technologies, designed for high-power applications. It shares characteristics with other devices in the series but is distinguished by its specific voltage rating, current capacity, and package type. The technology focuses on providing reliable performance in demanding environments while maintaining efficiency through low on-state resistance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SPI80N06S-08 (PG-TO262-3-1) and SPP80N06S-08 (PG-TO220-3-1), which share identical electrical specifications but differ in physical packaging. Verify pinout compatibility and thermal interface requirements when transitioning between these variants.