SPP80N03S2L-03

Single FETs, MOSFETs Overview

The SPP80N03S2L-03 is an N-channel enhancement mode OptiMOS power transistor in a P-TO220-3 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 80 A at 25°C case temperature. The device has a maximum on-state resistance of 3.1 mΩ at VGS=10V and 2.9 mΩ at VGS=4.5V. It supports a pulsed drain current of 320 A, single pulse avalanche energy of 810 mJ, and reverse diode dv/dt rating of 6 kV/µs. Operating temperature range is -55°C to +175°C with a thermal resistance junction-to-case of 0.5 K/W.

Single FETs, MOSFETs Feature Summary

• OptiMOS technology providing excellent gate charge and on-state resistance figure of merit
• Avalanche rated capability for robust operation under transient conditions
• High dv/dt rating suitable for demanding switching applications
• Logic level gate drive compatibility for efficient control

Single FETs, MOSFETs Applications

• Power switching circuits requiring high current handling
• DC-DC converter topologies utilizing low voltage MOSFETs
• Motor control applications with avalanche stress requirements

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering code Q67040-S4248 against your bill of materials. Confirm that the P-TO220-3 leaded package matches your PCB footprint requirements. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capacity and avalanche ruggedness is required. The logic level feature allows direct drive from standard logic voltages. Consider the TO220 package for through-hole mounting and effective heat dissipation compared to surface mount alternatives in the same series.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS Power-Transistor family, specifically the S2L series designed for low voltage applications. It shares technical characteristics with the SPI80N03S2L-03 and SPB80N03S2L-03 variants, differing primarily in the physical package configuration while maintaining identical electrical performance specifications.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include SPI80N03S2L-03 (TO262) and SPB80N03S2L-03 (TO263). Verify package dimensions and pinout compatibility before substitution. Other OptiMOS devices with similar voltage and current ratings may require circuit redesign due to differences in gate charge or thermal resistance.