SQ2348ES-T1_GE3

$0.79

Description：MOSFET N-CH 30V 8A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f032658cdf88 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQ2348ES-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 8A TO236. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQ2348ES-T1_GE3

Description：MOSFET N-CH 30V 8A TO236
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：24mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SQ2348ES-T1_GE3

SQ2348ES-T1_GE3

Single FETs, MOSFETs Overview

The SQ2348ES-T1_GE3 is an automotive-grade N-Channel power MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and supports continuous drain currents up to 8 A at 25 °C, with a maximum of 5.3 A at 125 °C. The device offers a low on-state resistance of 24 mΩ at VGS = 10 V and 32 mΩ at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C and is housed in a SOT-23 package.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and single pulse avalanche capability

Single FETs, MOSFETs Applications

Automotive electronic systems requiring high reliability
Low-side switching applications in vehicle circuits
Power management modules operating under harsh thermal conditions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging and compliance attributes. Confirm that the component meets the required AEC-Q101 qualification status for your target application. Cross-reference the datasheet revision date to ensure all electrical parameters align with current manufacturing specifications before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT-23 footprint is required for automotive N-Channel switching. The low RDS(on) values support efficient power handling at both 4.5 V and 10 V gate drive levels. Ensure the design accommodates the specified thermal dissipation limits and avalanche energy ratings for robust operation.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQ series of automotive MOSFETs. It utilizes the TrenchFET generation technology to achieve low on-resistance in a small surface-mount package. The product line is designed specifically to meet the rigorous environmental and reliability demands of modern automotive electronics.