SQJ858AEP-T1_GE3

$1.20

Description：MOSFET N-CH 40V 58A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4129bdc85774 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQJ858AEP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 58A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJ858AEP-T1_GE3

Description：MOSFET N-CH 40V 58A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2450 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：48W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

Single FETs, MOSFETs Overview

The SQJ858AEP-T1-GE3 is an automotive-grade N-channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and supports continuous drain currents up to 58 A at 25 °C case temperature. The device offers a low on-state resistance of 6.3 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V. Qualified under AEC-Q101 standards, it operates within a junction temperature range of -55 °C to +175 °C. The component is housed in a leadless PowerPAK SO-8L single configuration package.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology for optimized performance
Automotive qualification compliant with AEC-Q101 standards
100% tested for on-resistance and unclamped inductive switching (UIS)
Lead-free and halogen-free material composition

Single FETs, MOSFETs Applications

Automotive electronic systems requiring high reliability
Low-side switching applications in vehicle power distribution
General-purpose power management circuits operating at 40 V

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and environmental compliance. Confirm current production status as components may be subject to change or obsolescence. Ensure that the intended application environment aligns with the specified thermal and electrical ratings provided in the datasheet before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive-grade N-channel switching capabilities. Consider the low on-resistance characteristics for minimizing conduction losses in high-current paths. Evaluate the thermal resistance parameters relative to the PCB layout constraints to ensure adequate heat dissipation within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the SQJ series of automotive MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8L package, which provides a compact footprint suitable for space-constrained printed circuit board designs. The series is characterized by its TrenchFET technology, offering improved switching performance compared to standard planar devices.