SS8550-H

Single Bipolar Transistors Overview

The EVVO SS8550 is a PNP silicon epitaxial planar transistor housed in a SOT-23 surface-mount package. It features a maximum collector current of -1.5 A and a collector-emitter breakdown voltage of -25 V. The device has a power dissipation rating of 200 mW at 25°C ambient temperature, with a transition frequency of 100 MHz. DC current gain ranges from 120 to 400 depending on the ranking class.

Single Bipolar Transistors Feature Summary

• Complementary to the NPN SS8050 transistor for push-pull applications
• High collector current capability suitable for switching loads
• Surface-mount SOT-23 packaging for automated assembly

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Audio amplifier stages
• Driver circuits for relays or LEDs

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation EVVO against the specific project requirements. Confirm that the SOT-23 package dimensions align with the PCB footprint. Ensure the hFE ranking class meets the circuit's gain specifications. Check RoHS compliance status if required by environmental regulations.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with moderate current handling is needed in a compact form factor. Compare the 200 mW thermal limit against the expected operating conditions. Consider the complementary SS8050 if an NPN counterpart is also required for the design.

Single Bipolar Transistors Part Context

This part belongs to the widely used 8550 series of PNP transistors. Variants exist in different packages such as TO-92 (S8550) and plastic encapsulated forms. The SOT-23 version offers space savings compared to through-hole alternatives while maintaining similar electrical characteristics for general electronics.

Single Bipolar Transistors Replacement Considerations

SS8050 is the complementary NPN type. S8550 is the through-hole equivalent. MMSS8550-H-TP is a compatible alternative in the same package.