SSP2N60A

Single FETs, MOSFETs Overview

The SSP2N60A is a discontinued N-Channel enhancement mode Power MOSFET manufactured by Fairchild Semiconductor. It utilizes planar DMOS technology to achieve low on-state resistance and superior switching performance. The device is rated for a drain-source voltage of 600V and a continuous drain current of 2A at case temperature. Key electrical parameters include a maximum on-resistance of 5Ω and an avalanche energy rating of 120 mJ. It is housed in a TO-220AB package with three pins.

Single FETs, MOSFETs Feature Summary

• Avalanche rugged technology designed to withstand high energy pulses in avalanche and commutation modes
• Rugged gate oxide technology providing enhanced reliability and lower input capacitance
• Extended safe operating area (SOA) for robust performance under varying load conditions

Single FETs, MOSFETs Applications

• High voltage power switching circuits
• DC-DC converter topologies
• Inductive load switching applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels as the SSP2N60A is officially discontinued by Fairchild Semiconductor. Confirm that the specific lot date codes meet project requirements, noting potential availability only through secondary market distributors or surplus stock holders. Ensure compatibility with existing thermal management designs given the TO-220AB package constraints.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling up to 2A. Consider the 5Ω on-resistance when calculating conduction losses. Evaluate the TO-220AB package for adequate heat dissipation needs. Compare against newer SupreMOS™ series devices if lower on-resistance or improved gate charge characteristics are required for modern efficiency standards.

Single FETs, MOSFETs Part Context

This part belongs to Fairchild's legacy N-Channel MOSFET portfolio produced using proprietary planar DMOS technology. It was designed to minimize on-state resistance while maintaining ruggedness against avalanche events. The SSP2N60A represents an earlier generation of power discrete semiconductors before the widespread adoption of advanced superjunction technologies found in later product lines.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the device is obsolete, engineers should consult manufacturer cross-reference guides or evaluate equivalent 600V N-Channel MOSFETs from current production lines, ensuring pinout compatibility with the TO-220AB package.