STB45N50DM2AG

$6.24

Description：MOSFET N-CH 500V 35A D2PAK
Series：MDmesh™ DM2
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:618590e3b5c0 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STB45N50DM2AG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 35A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB45N50DM2AG

Description：MOSFET N-CH 500V 35A D2PAK
Series：MDmesh™ DM2
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：84mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STB45N50DM2AG

STB45N50DM2AG

Single FETs, MOSFETs Overview

The STB45N50DM2AG is an automotive-grade N-channel Power MOSFET from the MDmesh DM2 series, rated for 500 V drain-source voltage and 35 A continuous current. It features a typical on-resistance of 0.07 Ohm and is housed in a D2PAK surface-mount package. The device offers very low recovery charge and time, combined with extremely low gate charge and input capacitance. It includes a fast-recovery body diode and is 100% avalanche tested for high dv/dt ruggedness.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability
Fast-recovery body diode with low reverse recovery characteristics
Extremely low gate charge and input capacitance for efficient switching
Zener-protected gate structure

Single FETs, MOSFETs Applications

Full-bridge phase-shifted Zero Voltage Switching (ZVS) topologies
High-voltage power conversion applications
Automotive electronic systems requiring robust MOSFETs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification standards for your target application. Check the datasheet for thermal resistance values relevant to your heat sink design. Ensure compatibility with your PCB footprint for the D2PAK package.

Single FETs, MOSFETs Selection Notes

Select this component when high breakdown voltage and automotive qualification are required. The low on-resistance supports high-efficiency designs. Consider the D2PAK package for surface-mount assembly needs. Evaluate the fast-recovery diode characteristics if synchronous rectification or freewheeling is part of the circuit topology.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM2 series of fast-recovery diode MOSFETs. The series covers breakdown voltages from 400 V to 650 V. These devices are designed for high-performance power conversion. The MDmesh technology combines low on-resistance with fast diode recovery.