Single Bipolar Transistors STD03N product image

STD03N

  • Description:TRANS NPN DARL 160V 15A TO-3P-5L
  • Series:-

SKU:e593e20d08af Category: Brand:

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STD03N is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN DARL 160V 15A TO-3P-5L. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for STD03N

  • Description:TRANS NPN DARL 160V 15A TO-3P-5L
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):15 A
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 10mA, 10A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 10A, 4V
  • Power - Max:160 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-5
  • Supplier Device Package:TO-3P-5L
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for STD03N

STD03N

Single Bipolar Transistors Overview

The STD03N is an NPN Darlington power transistor manufactured by Sanken Electric Co., Ltd. It features a built-in temperature compensation diode and utilizes a thin-wafer structure to achieve high collector power dissipation of 160 W in a TO-3P package. The device supports a maximum collector-emitter voltage (VCEO) of 160 V and a continuous collector current (IC) of 15 A. It offers a DC current transfer ratio (hFE) ranging from 5,000 to 20,000 depending on the rank. The component is designed for audio output applications and is complementary to the STD03P model.

Single Bipolar Transistors Feature Summary

  • Integrates a built-in temperature compensation diode to simplify circuit design and reduce external component count.
  • Utilizes a thinner die structure to minimize internal impedance and enhance thermal performance.
  • Provides high power handling capability within a compact TO-3P package to minimize heatsink requirements.

Single Bipolar Transistors Applications

  • Audio output stages
  • Complementary pairing with PNP variants

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (O or Y) required for the application, as this affects the DC current transfer ratio limits. Confirm that the TO-3P MT-105 package dimensions align with the existing mechanical layout. Ensure the operating junction temperature does not exceed 150 °C under all load conditions. Check for updated documentation regarding the 'Not Recommended for New Designs' status before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select the STD03N when a high-gain NPN Darlington configuration with integrated thermal compensation is needed for audio amplification. Consider the complementary STD03P for push-pull arrangements. Evaluate the 160 W power dissipation rating against the actual thermal resistance of the heatsink system. Verify that the 160 V voltage rating provides sufficient margin for the supply rails.

Single Bipolar Transistors Part Context

The STD03N belongs to Sanken's line of enhanced Darlington transistors designed for audio amplifier applications. These devices are manufactured using proprietary thin-wafer production technology to improve power density. The product family includes complementary NPN and PNP versions to facilitate balanced circuit designs. Distribution in North America and Europe is handled by Allegro MicroSystems.

Single Bipolar Transistors Replacement Considerations

The official complementary part number is STD03P. Other similar Darlington transistors may be considered if electrical parameters match, but the built-in compensation diode must be accounted for in the replacement design.

Single Bipolar Transistors FAQ

What is the function of the built-in diode?

The built-in diode serves as a temperature compensation element. When used in pairs, the total forward voltage of the diodes must be less than or equal to the total base-emitter voltage of the transistors to ensure proper biasing.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 160 W when the case temperature is maintained at 25 °C.

Is this component suitable for new designs?

No, the datasheet explicitly states that the STD03N is 'Not Recommended for New Designs'.

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