STD30NF06

Single FETs, MOSFETs Overview

The STD30NF06 is an N-channel enhancement mode Power MOSFET from the STripFET II series by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 30 A at 25°C. The device utilizes a unique strip-based process to achieve low on-resistance, with a typical Rds(on) of 0.014 Ω at Vgs = 10 V. Packaged in a TO-252 (DPAK) surface-mount housing, it offers high packing density and rugged avalanche characteristics suitable for primary switching applications.

Single FETs, MOSFETs Feature Summary

• Utilizes STMicroelectronics' unique StripFET II strip-based process technology
• Designed to minimize input capacitance and gate charge for efficient switching
• Features extremely high packing density resulting in low on-resistance
• Provides rugged avalanche characteristics with less critical alignment steps

Single FETs, MOSFETs Applications

• Primary switch in advanced high-efficiency isolated DC-DC converters
• Telecommunications power supply circuits
• Computer application power management systems
• Applications requiring low gate charge driving requirements

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation, as ordering codes may indicate variations in packaging or tape-and-reel specifications. Confirm that the required package type matches the physical constraints of the target design. Ensure the selected component meets all relevant environmental compliance standards required for the final assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require a 60 V breakdown voltage with moderate current handling capabilities. The low gate charge makes it suitable for drivers with limited output current. Consider the thermal performance of the TO-252 package and ensure adequate heatsinking or PCB copper area is allocated to manage power dissipation under continuous load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET II family of medium-voltage N-channel MOSFETs. These devices are engineered using Single Feature Size technology to optimize the trade-off between on-resistance and gate charge. The portfolio spans various packages including TO-220, DPAK, and D2PAK, catering to diverse industrial and consumer power conversion needs.

Single FETs, MOSFETs Replacement Considerations

Check for direct equivalents within the same voltage and current class. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets or exceeds the original's avalanche energy rating and gate threshold voltage specifications.