STD80N3LL

Single FETs, MOSFETs Overview

The STD80N3LL is an N-channel Power MOSFET manufactured by STMicroelectronics, utilizing STripFET H6 technology to achieve very low on-resistance. It features a 30 V drain-source voltage rating and a continuous drain current of 80 A at 25 °C case temperature. The device offers a maximum static RDS(on) of 5.2 mΩ at VGS = 10 V and 40 A. Total gate charge is typically 18 nC. It operates within a junction temperature range of -55 °C to +175 °C and provides high avalanche ruggedness with low gate drive power loss.

Single FETs, MOSFETs Feature Summary

• Very low on-resistance across all packages
• High avalanche ruggedness
• Low gate drive power loss

Single FETs, MOSFETs Applications

• Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure compatibility with required package types and environmental compliance grades. Confirm that the procurement channel sources production data versions rather than preliminary releases. Ensure storage and handling procedures align with standard semiconductor preservation guidelines to maintain component integrity prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses in 30 V systems. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the gate charge specifications when designing driver circuits to optimize switching performance. Verify that the DPAK package footprint matches the target PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET H6 family of N-channel Power MOSFETs from STMicroelectronics. These devices are engineered for low-voltage applications demanding high efficiency. The STD80N3LL specifically targets scenarios where minimizing on-state resistance and improving switching speed are critical for overall system performance and energy conservation.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for compatible alternatives. Cross-reference electrical parameters such as breakdown voltage, current ratings, and package dimensions before implementation.