Single FETs, MOSFETs STF10N60M2 product image

STF10N60M2

$1.36
  • Description:MOSFET N-CH 600V 7.5A TO220FP
  • Series:MDmesh™ II Plus
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:773d8169de4e Category: Brand:

  
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STF10N60M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 7.5A TO220FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STF10N60M2

  • Description:MOSFET N-CH 600V 7.5A TO220FP
  • Series:MDmesh™ II Plus
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:600mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.5 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):25W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220FP
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for STF10N60M2

STF10N60M2

Single FETs, MOSFETs Overview

STF10N60M2 is an N-channel enhancement-mode Power MOSFET from the MDmesh M2 series by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 7.5 A. The device has a typical on-resistance (Rds(on)) of 600 mΩ and a gate charge (Qg) of 13.5 nC at Vgs. It operates within a temperature range of -55°C to +150°C with a power dissipation of 25 W in a TO-220 package.

Single FETs, MOSFETs Feature Summary

  • Utilizes MDmesh M2 super-junction technology for optimized switching performance
  • Features extremely low gate charge and input capacitance
  • Includes Zener protection between gate and source terminals
  • Subjected to 100% avalanche testing for ruggedness

Single FETs, MOSFETs Applications

  • High-efficiency DC-DC converters
  • General-purpose power switching applications
  • Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical characteristics and packaging options. Ensure the component matches the required thermal management specifications for the intended application environment. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The MDmesh M2 technology offers a balance of low conduction losses and fast switching speeds. Consider the TO-220 through-hole package for ease of assembly and heat sinking in standard industrial designs requiring 650 V breakdown capability.

Single FETs, MOSFETs Part Context

The STF10N60M2 belongs to the MDmesh M2 family of super-junction power MOSFETs designed by STMicroelectronics. This series targets high-efficiency power conversion systems by combining low on-resistance with reduced switching losses. The device represents a mature generation of silicon carbide-free high-voltage transistors widely used in general-purpose electronics.

Single FETs, MOSFETs Replacement Considerations

Compatible alternatives include STF9N60M2 and STF12N60M2 from the same MDmesh M2 series, offering similar voltage ratings with adjusted current and resistance profiles.

STF10N60M2STF10N60M2
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