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STF10N60M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 7.5A TO220FP. Review the specifications below when checking this part for your BOM.
STF10N60M2 is an N-channel enhancement-mode Power MOSFET from the MDmesh M2 series by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 7.5 A. The device has a typical on-resistance (Rds(on)) of 600 mΩ and a gate charge (Qg) of 13.5 nC at Vgs. It operates within a temperature range of -55°C to +150°C with a power dissipation of 25 W in a TO-220 package.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical characteristics and packaging options. Ensure the component matches the required thermal management specifications for the intended application environment. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change.
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The MDmesh M2 technology offers a balance of low conduction losses and fast switching speeds. Consider the TO-220 through-hole package for ease of assembly and heat sinking in standard industrial designs requiring 650 V breakdown capability.
The STF10N60M2 belongs to the MDmesh M2 family of super-junction power MOSFETs designed by STMicroelectronics. This series targets high-efficiency power conversion systems by combining low on-resistance with reduced switching losses. The device represents a mature generation of silicon carbide-free high-voltage transistors widely used in general-purpose electronics.
Compatible alternatives include STF9N60M2 and STF12N60M2 from the same MDmesh M2 series, offering similar voltage ratings with adjusted current and resistance profiles.
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