SUD50N03-16P-GE3

$0.37

Description：MOSFET N-CH 30V TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:603ad3d715cf Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SUD50N03-16P-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SUD50N03-16P-GE3

Description：MOSFET N-CH 30V TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：6.5W (Ta), 40.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SUD50N03-16P-GE3

SUD50N03-16P-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SUD50N03-16P-GE3 is an N-channel vertical DMOS power MOSFET utilizing TrenchFET technology. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 50 A at 25°C case temperature. The device offers a maximum on-resistance (Rds(on)) of 16 mΩ at a gate-source voltage (Vgs) of 10 V. Packaged in the TO-252AA (DPAK) surface-mount housing, it supports a junction temperature range from -55°C to +175°C with a maximum power dissipation of 113 W at case temperature.

Single FETs, MOSFETs Feature Summary

TrenchFET technology provides low on-resistance for reduced conduction losses.
Enhanced switching performance through optimized gate charge characteristics.
High avalanche energy capability ensures robust operation under transient conditions.

Single FETs, MOSFETs Applications

DC-DC converters
Power factor correction circuits
Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GE3' confirms RoHS compliance and halogen-free status as per the manufacturer's declaration. Confirm the package outline matches the required PCB footprint for the TO-252AA form factor. Ensure the component lot date code aligns with project lifecycle requirements, noting that availability may vary by region.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and high current handling are required in a compact surface-mount package. The low Rds(on) makes it suitable for efficiency-critical applications. Compare against other TrenchFET variants if different voltage ratings or thermal constraints apply to the specific design topology.

Single FETs, MOSFETs Part Context

This part belongs to the SUD50 series of N-channel MOSFETs designed for general-purpose power switching. The series utilizes planar cell technology to achieve low on-resistance and fast switching speeds. It is commonly used in automotive and industrial applications requiring reliable performance in harsh environments.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts within the SUD50 family or comparable 30 V, 50 A DPAK MOSFETs. Verify pinout compatibility and thermal resistance values before substitution to ensure circuit integrity.